Part Number Hot Search : 
PR1501G1 RT7275 M1G5CA 55X5200 48LC4M ES51922 EDZ16 FAN7024
Product Description
Full Text Search
 

To Download TIP33C Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  inchange semiconductor product specification silicon npn power transistors tip33/33a/33b/33c description ? with to-3pn package ? complement to type tip34/34a/34b/34c ? dc current gain h fe =40(min)@i c =1.0a applications ? designed for use in general purpose power amplifier and switching applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit tip33 40 tip33a 60 tip33b 80 v cbo collector-base voltage TIP33C open emitter 100 v tip33 40 tip33a 60 tip33b 80 v ceo collector-emitter voltage TIP33C open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 15 a i b base current 3 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.56 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors tip33/33a/33b/33c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit tip33 40 tip33a 60 tip33b 80 v ceo collector-emitter sustaining voltage TIP33C i c =30ma ;i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =3a ;i b =0.3a 1.0 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =2.5a 4.0 v v be-1 base-emitter on voltage i c =3a ; v ce =4v 1.6 v v be-2 base-emitter on voltage i c =10a ; v ce =4v 3.0 v tip33/33a v ce =30v; i b =0 i ceo collector cut-off current tip33b/33c v ce =60v; i b =0 0.7 ma tip33 v ce =40v;v eb =0 tip33a v ce =60v;v eb =0 tip33b v ce =80v;v eb =0 i ces collector cut-off current TIP33C v ce =100v;v eb =0 0.4 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =4v 40 h fe-2 dc current gain i c =3a ; v ce =4v 20 100 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 3.0 mhz
inchange semiconductor product specification 3 silicon npn power transistors tip33/33a/33b/33c package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)


▲Up To Search▲   

 
Price & Availability of TIP33C

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X